STMicroelectronics, Inc. Single FETs, MOSFETs STLD200N4F6AG

N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side

N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side

N-Channel 40V 120A (Tc) 158W (Tc) Surface Mount PowerFlat™ (5x6) Dual Side

Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 dual side cooling package Product overview: STLD200N4F6AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, Dual, 40 V, 1.27 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, Dual, 40 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STLD200N4F6AG can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 120A POWERFLAT

Win Source Part Number: 1355483-STLD200N4F6AG
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Series: Automotive, AEC-Q101, STripFET™ F6
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerFlat™ (5x6) Dual Side
Base Product Number: STLD200
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
Power Dissipation (Max): 158W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET