STMicroelectronics, Inc. Single FETs, MOSFETs STL7N60M2

Description
MOSFET N-CH 600V 5A POWERFLAT
Request a Quote Datasheet
Description
MOSFET N-CH 600V 5A POWERFLAT
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STL7N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STL7N60M2
Single FETs, MOSFETs STL7N60M2
MOSFET N-CH 600V 5A POWERFLAT

MOSFET N-CH 600V 5A POWERFLAT

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7N60M2 - 143803-STL7N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7N60M2
143803-STL7N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7N60M2 143803-STL7N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 143803-STL7N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4W (Ta), 67W (Tc) Family Name: STL7N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PowerFLAT (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.8nC @ 10V Max Input Capacitance: 271pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 2A, 10V Introduction Date: August 03, 2015 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2033 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 143803-STL7N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4W (Ta), 67W (Tc)
Family Name: STL7N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PowerFLAT (5x5)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.8nC @ 10V
Max Input Capacitance: 271pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 2A, 10V
Introduction Date: August 03, 2015
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2033
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-16519-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16519-6-ND
Single FETs, MOSFETs 497-16519-6-ND
N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

Buy Now Datasheet
Single FETs, MOSFETs - 497-16519-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16519-1-ND
Single FETs, MOSFETs 497-16519-1-ND
N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

Buy Now Datasheet
Single FETs, MOSFETs - 497-16519-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16519-2-ND
Single FETs, MOSFETs 497-16519-2-ND
N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

N-Channel 600V 5A (Tc) 4W (Ta), 67W (Tc) Surface Mount PowerFLAT™ (5x5)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL7N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL7N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL7N60M2
MOSFET N-CH 600V 5A POWERFLAT

MOSFET N-CH 600V 5A POWERFLAT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package

MOSFET N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STL7N60M2
Triode/MOS Tube/Transistor >> MOSFETs STL7N60M2
600V 5A 4W 1.05Ω@10V,2A 4V@250uA N Channel PowerFLAT-12(5x5) MOSFETs ROHS

600V 5A 4W 1.05Ω@10V,2A 4V@250uA N Channel PowerFLAT-12(5x5) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STL7N60M2 143803-STL7N60M2 497-16519-6-ND STL7N60M2 STL7N60M2 STL7N60M2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL7N60M2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 5000 milliamps
PD 4000 milliwatts 4000 to 67000 milliwatts 4000 milliwatts
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