N-Channel 30V 13A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
N-Channel 30V 13A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
N-Channel 30V 13A (Tc) 2.4W (Tc) Surface Mount PowerFlat™ (2x2)
N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package Product overview: STL6N3LLH6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30 V, 0.021 Ohm, 6 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30 V, 0.021 Ohm, 6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL6N3LLH6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 811195-STL6N3LLH6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerFlat (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-PowerWDFN
Power Dissipation (Maximum): 2.4W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 25mOhm at 3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 3.6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 283pF at 24V
Vgs(th) (Maximum) at Id: 1V at 250μA (Min)
Part Number Series: STL6
Maximum Vgs: ±20V
MOSFET N-CH 30V POWERFLAT
MOSFET, N-CH, 30V, 13A, 150DEG C, 7.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET N-Ch 30 V 0.021 Ohm 6 A STripFET VI DG
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-13651-6-ND | 278-STL6N3LLH6 | 811195-STL6N3LLH6 | STL6N3LLH6 | 26AH0196 | STL6N3LLH6 |
| Product Name | Single FETs, MOSFETs | N-Channel 30 V 0.021 Ohm 6 A MOSFET Transistor | FETs - Single - STL6N3LLH6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 13A, 150Deg C, 7.8W; Transistor Polarity Stmicroelectronics | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | 6-PowerWDFN | SOT3 | 283 pF @ 24 V | TO-3 | ||
| PD | 2400 milliwatts | 2400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
