STMicroelectronics, Inc. Single FETs, MOSFETs STL33N65M2

N-Channel 650V 20A (Tc) 150W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-channel 650 V, 0.124 Ohm typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Product overview: STL33N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.124 Ohm, 20 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.124 Ohm, 20 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL33N65M2 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 712355-STL33N65M2
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PowerFlat (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 20A
Rds On (Maximum) at Id, Vgs: 154mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 41.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1790pF at 100V