Manufacturer: STMicroelectronics
Win Source Part Number: 1261324-STL26NM60N
Series: MDmesh II
Packaging: Reel - TR
Operating Temperature Range: 150°C (TJ)
Package: 4-PowerFlat HV
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 19A (Tc)
Family Name: STL26NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: PowerFlat (8x8) HV
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1800pF @ 50V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125mW (Ta), 3W (Tc)
Rds On (Maximum) @ Id, Vgs: 185 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IPL60R180P6AUMA1; TK16V60W(LVQ,S); TK16V60W;
Introduction Date: February 14, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
600V 19A N-CH MOSFET, 160mR RdsOn, PowerFLAT 8x8 HV Product overview: STL26NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19A, PowerFLAT, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL26NM60N can be used for catalog matching and distributor lookup.
N-Channel 600V 2.7A (Ta), 19A (Tc) 125mW (Ta), 3W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 600V 2.7A (Ta), 19A (Tc) 125mW (Ta), 3W (Tc) Surface Mount PowerFlat™ (8x8) HV
N-Channel 600V 2.7A (Ta), 19A (Tc) 125mW (Ta), 3W (Tc) Surface Mount PowerFlat™ (8x8) HV
MOSFET, N CH, 600V, 19A, POWERFLAT; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:19A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 600V 19A POWERFLAT
MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1261324-STL26NM60N | 278-STL26NM60N | 497-STL26NM60NTR-ND | 47T9318 | STL26NM60N | STL26NM60N |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL26NM60N | 600V 19A PowerFLAT MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Ch, 600V, 19A, Powerflat; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| QG | 60 nC | |||||
| PD | 125 to 3000 milliwatts | 3000 milliwatts | ||||
| TJ | 150 C (302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3 | 4-PowerVDFN | TO-3 | 8-PowerVDFN |
