STMicroelectronics, Inc. Single FETs, MOSFETs STL21N65M5

N-Channel 650V 17A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-Channel 650V 17A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-Channel 650V 17A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV

N-channel 650 V, 0.175 Ohm typ., 2.7 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package Product overview: STL21N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.175 Ohm, 2.7 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.175 Ohm, 2.7 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL21N65M5 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 17A PWRFLAT HV

Manufacturer: STMicroelectronics
Win Source Part Number: 053867-STL21N65M5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PowerFlat (8x8) HV
Dimension: 4-PowerFlat HV
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1950pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 179 mOhm @ 8.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance