N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package Product overview: STL19N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.278 Ohm, 11 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.278 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL19N60M2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 935439-STL19N60M2
Series: MDmesh™ M2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV
Package: 8-PowerVDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: STL19
Categories: Discrete Semiconductor Products
Case / Package: PowerFlat™ (8x8) HV
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 16 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV
MOSFET N-CH 600V 11A PWRFLAT HV
MOSFET, N-CH, 600V, 11A, POWERFLAT; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-channel 600 V, 0.278 Ohm typ., 11 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
MOSFET N-CH 600V 11A PWRFLAT HV
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STL19N60M2 | 935439-STL19N60M2 | STL19N60M2-ND | STL19N60M2 | 61AC2106 | STL19N60M2 | STL19N60M2 |
| Product Name | N-Channel 600 V 0.278 Ohm 11 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STL19N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 11A, Powerflat; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; PowerFlat™ (8x8) HV | 4-PowerVDFN | 8-PowerVDFN | TO-3 | 8-PowerVDFN | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
