STMicroelectronics, Inc. FETs - Single - STL12P6F6 STL12P6F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 813431-STL12P6F6 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerFlat (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 75W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 160mOhm at 1.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 6.4nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 48V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STL12 Maximum Vgs: ±20V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 813431-STL12P6F6 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerFlat (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 75W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 160mOhm at 1.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 6.4nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 48V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STL12 Maximum Vgs: ±20V
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Datasheet
Datasheet Summary
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The STL12P6F6 is a P-channel Power MOSFET designed for switching applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 12A at a case temperature of 25¬8C. It has a low on-resistance of 0.16,Ѷ at a gate-source voltage of 10V, which contributes to reduced power loss during operation. The device is housed in a compact PowerFLAT,Ñ¢ 5x6 package, allowing for efficient thermal management with a maximum total dissipation of 75W. The operating junction temperature range is from -55¬8C to 175¬8C, making it suitable for a variety of demanding applications. The MOSFET also exhibits high avalanche ruggedness and low gate charge, enhancing its reliability in circuit designs.

Datasheet Summary
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The STL12P6F6 is a P-channel Power MOSFET designed for switching applications, featuring a maximum drain-source voltage of 60V and a continuous drain current rating of 12A at a case temperature of 25¬8C. It has a low on-resistance of 0.16,Ѷ at a gate-source voltage of 10V, which contributes to reduced power loss during operation. The device is housed in a compact PowerFLAT,Ñ¢ 5x6 package, allowing for efficient thermal management with a maximum total dissipation of 75W. The operating junction temperature range is from -55¬8C to 175¬8C, making it suitable for a variety of demanding applications. The MOSFET also exhibits high avalanche ruggedness and low gate charge, enhancing its reliability in circuit designs.

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STL12P6F6 - 813431-STL12P6F6 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STL12P6F6
813431-STL12P6F6
FETs - Single - STL12P6F6 813431-STL12P6F6
Manufacturer: STMicroelectronics Win Source Part Number: 813431-STL12P6F6 Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60V Supplier Device Package: PowerFlat (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 75W (Tc) Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 160mOhm at 1.5A, 10V Gate Charge (Qg) (Maximum) at Vgs: 6.4nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 48V Current - Continuous Drain (Id) at 25°C: 4A (Tc) Vgs(th) (Maximum) at Id: 4V at 250μA Part Number Series: STL12 Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 813431-STL12P6F6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: PowerFlat (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 75W (Tc)
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 160mOhm at 1.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 6.4nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 340pF at 48V
Current - Continuous Drain (Id) at 25°C: 4A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Part Number Series: STL12
Maximum Vgs: ±20V

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Single FETs, MOSFETs - STL12P6F6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STL12P6F6
Single FETs, MOSFETs STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT

MOSFET P-CH 60V 4A POWERFLAT

Supplier's Site Datasheet
Singapore
P-Channel 60 V 0.13 Ohm 3 A MOSFET Transistor
278-STL12P6F6
P-Channel 60 V 0.13 Ohm 3 A MOSFET Transistor 278-STL12P6F6
P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Product overview: STL12P6F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60 V, 0.13 Ohm, 3 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 0.13 Ohm, 3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL12P6F6 can be used for catalog matching and distributor lookup.

P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Product overview: STL12P6F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60 V, 0.13 Ohm, 3 A, PowerFLAT. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 0.13 Ohm, 3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STL12P6F6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-13840-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13840-6-ND
Single FETs, MOSFETs 497-13840-6-ND
P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - 497-13840-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13840-2-ND
Single FETs, MOSFETs 497-13840-2-ND
P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

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Single FETs, MOSFETs - 497-13840-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13840-1-ND
Single FETs, MOSFETs 497-13840-1-ND
P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6)

Buy Now Datasheet
Mosfet, P-Ch, -60V, -12A, 175Deg C, 75W; Transistor Polarity Stmicroelectronics - 26AH0185 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -60V, -12A, 175Deg C, 75W; Transistor Polarity Stmicroelectronics
26AH0185
Mosfet, P-Ch, -60V, -12A, 175Deg C, 75W; Transistor Polarity Stmicroelectronics 26AH0185
MOSFET, P-CH, -60V, -12A, 175DEG C, 75W; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

MOSFET, P-CH, -60V, -12A, 175DEG C, 75W; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STL12P6F6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STL12P6F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT

MOSFET P-CH 60V 4A POWERFLAT

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-CH 60V 0.13Ohm 3A STripFET VI

MOSFET P-CH 60V 0.13Ohm 3A STripFET VI

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 813431-STL12P6F6 STL12P6F6 278-STL12P6F6 497-13840-6-ND 26AH0185 STL12P6F6 STL12P6F6
Product Name FETs - Single - STL12P6F6 Single FETs, MOSFETs P-Channel 60 V 0.13 Ohm 3 A MOSFET Transistor Single FETs, MOSFETs Mosfet, P-Ch, -60V, -12A, 175Deg C, 75W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel
QG 6.4 nC
PD 75000 milliwatts 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type SOT3 8-PowerVDFN 8-PowerVDFN TO-3 8-PowerVDFN
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