STMicroelectronics, Inc. Single FETs, MOSFETs STI90N4F3

Description
N-Channel 40V 80A (Tc) 110W (Tc) Through Hole I2PAK
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Description
N-Channel 40V 80A (Tc) 110W (Tc) Through Hole I2PAK
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - STI90N4F3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STI90N4F3-ND
Single FETs, MOSFETs STI90N4F3-ND
N-Channel 40V 80A (Tc) 110W (Tc) Through Hole I2PAK

N-Channel 40V 80A (Tc) 110W (Tc) Through Hole I2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277999-STI90N4F3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277999-STI90N4F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277999-STI90N4F3
Win Source Part Number: 1277999-STI90N4F3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: STripFET™ III Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STI9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277999-STI90N4F3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: STripFET™ III
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STI9
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI90N4F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI90N4F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI90N4F3
MOSFET N-CH 40V 80A I2PAK

MOSFET N-CH 40V 80A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number STI90N4F3-ND 1277999-STI90N4F3 STI90N4F3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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