STMicroelectronics, Inc. Through-Hole 650V 7A MOSFET Transistor STI8N65M5

650V 7A N-CH Power MOSFET, I2PAK, Through Hole Product overview: STI8N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 650V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 650V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI8N65M5 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261105-STI8N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 70W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 7A
Rds On (Maximum) at Id, Vgs: 600mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 690pF at 100V

N-Channel 650V 7A (Tc) 70W (Tc) Through Hole I2PAK