MOSFET N-CH 620V 5.5A I2PAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1324679-STI6N62K3
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: I2PAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-12265,-497-12265
Base Product Number: STI6N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 620V 5.5A (Tc) 90W (Tc) Through Hole I2PAK
MOSFET N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK
MOSFET N-CH 620V 5.5A I2PAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STI6N62K3 | 1324679-STI6N62K3 | 497-12265-ND | STI6N62K3 | STI6N62K3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 620 volts | ||||
| IDSS | 5500 milliamps |
