STMicroelectronics, Inc. Single FETs, MOSFETs STI4N62K3

N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole I2PAK

620V N-CH MOSFET, 3.8A, 2 Ohm, TO-262 Product overview: STI4N62K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 620V, 3.8A, 2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 620V, 3.8A, 2 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI4N62K3 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 808277-STI4N62K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620V
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 70W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.9A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 50V
Current - Continuous Drain (Id) at 25°C: 3.8A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 50μA
Part Number Series: STI4N
Maximum Vgs: ±30V