Manufacturer: STMicroelectronics
Win Source Part Number: 808277-STI4N62K3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 620V
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 70W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2Ohm at 1.9A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 550pF at 50V
Current - Continuous Drain (Id) at 25°C: 3.8A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 50μA
Part Number Series: STI4N
Maximum Vgs: ±30V
N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole I2PAK
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| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 808277-STI4N62K3 | 497-12262-ND | STI4N62K3 | STI4N62K3 |
| Product Name | FETs - Single - STI4N62K3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||
| QG | 22 nC | |||
| PD | 70000 milliwatts |
