STMicroelectronics, Inc. Single FETs, MOSFETs STI35N65M5

Description
N-Channel 650V 27A (Tc) 160W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 650V 27A (Tc) 160W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 497-11332-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-11332-5-ND
Single FETs, MOSFETs 497-11332-5-ND
N-Channel 650V 27A (Tc) 160W (Tc) Through Hole I2PAK

N-Channel 650V 27A (Tc) 160W (Tc) Through Hole I2PAK

Buy Now Datasheet
FETs - Single - STI35N65M5 - 1261097-STI35N65M5 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STI35N65M5
1261097-STI35N65M5
FETs - Single - STI35N65M5 1261097-STI35N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1261097-STI35N65M5 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 160W Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 27A Rds On (Maximum) at Id, Vgs: 98mOhm at 13.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 83nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 3750pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261097-STI35N65M5
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 160W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 27A
Rds On (Maximum) at Id, Vgs: 98mOhm at 13.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 83nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 3750pF at 100V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI35N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI35N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI35N65M5
MOSFET N-CH 650V 27A I2PAK

MOSFET N-CH 650V 27A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number 497-11332-5-ND 1261097-STI35N65M5 STI35N65M5
Product Name Single FETs, MOSFETs FETs - Single - STI35N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA TO-220; TO-247; SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 650 volts
QG 83 nC
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