STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 STI33N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261096-STI33N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: STI33N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK (TO-262) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IPI65R190E6; IPI65R150CFDXK; IPI65R190C6; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 - 1261096-STI33N60M2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-15016-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STI33N60M2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI33N60M2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261096-STI33N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: STI33N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK (TO-262) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IPI65R190E6; IPI65R150CFDXK; IPI65R190C6; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 - 1261096-STI33N60M2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2
1261096-STI33N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 1261096-STI33N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261096-STI33N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: STI33N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK (TO-262) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IPI65R190E6; IPI65R150CFDXK; IPI65R190C6; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261096-STI33N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: STI33N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I2PAK (TO-262)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): IPI65R190E6; IPI65R150CFDXK; IPI65R190C6;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-15016-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15016-5-ND
Single FETs, MOSFETs 497-15016-5-ND
N-Channel 600V 26A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 26A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Single FETs, MOSFETs - STI33N60M2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STI33N60M2
Single FETs, MOSFETs STI33N60M2
MOSFET N-CH 600V 26A I2PAK

MOSFET N-CH 600V 26A I2PAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STI33N60M2
MOSFET STI33N60M2
MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package

MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI33N60M2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI33N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI33N60M2
MOSFET N-CH 600V 26A I2PAK

MOSFET N-CH 600V 26A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1261096-STI33N60M2 497-15016-5-ND STI33N60M2 STI33N60M2 STI33N60M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QG 45.5 nC
PD 190000 milliwatts 190000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-247; SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Packing Method Tube; Tube Tube; Tube
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