N-Channel 600V 26A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)
Manufacturer: STMicroelectronics
Win Source Part Number: 1261096-STI33N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: STI33N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I2PAK (TO-262)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 45.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1781pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 125 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): IPI65R190E6; IPI65R150CFDXK; IPI65R190C6;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 26A I2PAK
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package Product overview: STI33N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.108 Ohm, 26 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.108 Ohm, 26 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI33N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
MOSFET N-CH 600V 26A I2PAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-15016-5-ND | 1261096-STI33N60M2 | STI33N60M2 | 278-STI33N60M2 | STI33N60M2 | STI33N60M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI33N60M2 | Single FETs, MOSFETs | N-Channel 600 V 0.108 Ohm 26 A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-220; TO-247; SOT3 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | ||
| QG | 45.5 nC | |||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
