STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STI28N60M2

Description
Win Source Part Number: 1278076-STI28N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17621,2266-STI28 N60M2 Base Product Number: STI28 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278076-STI28N60M2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-17621-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI28N60M2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1278076-STI28N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17621,2266-STI28 N60M2 Base Product Number: STI28 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278076-STI28N60M2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278076-STI28N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278076-STI28N60M2
Win Source Part Number: 1278076-STI28N60M2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-17621,2266-STI28 N60M2 Base Product Number: STI28 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278076-STI28N60M2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-17621,2266-STI28N60M2
Base Product Number: STI28
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 497-17621-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17621-ND
Single FETs, MOSFETs 497-17621-ND
N-Channel 600V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 22A (Tc) 170W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI28N60M2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI28N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI28N60M2
MOSFET N-CH 600V 22A I2PAK

MOSFET N-CH 600V 22A I2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STI28N60M2
MOSFET STI28N60M2
MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1278076-STI28N60M2 497-17621-ND STI28N60M2 STI28N60M2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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