STMicroelectronics, Inc. Single FETs, MOSFETs STI24NM60N

Description
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK
Request a Quote Datasheet
Description
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - 497-12260-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12260-ND
Single FETs, MOSFETs 497-12260-ND
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK

N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI24NM60N - 1261093-STI24NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI24NM60N
1261093-STI24NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI24NM60N 1261093-STI24NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1261093-STI24NM60N Series: MDmesh II Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Family Name: STI24NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: I2PAK Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 50V Vgs (Maximum): ±30V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 8A, 10V Alternative Parts (Cross-Reference): TK16C60W; IPI60R190C6XK; SPI20N60C3X; Introduction Date: January 05, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261093-STI24NM60N
Series: MDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Family Name: STI24NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 50V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): TK16C60W; IPI60R190C6XK; SPI20N60C3X;
Introduction Date: January 05, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II MOS

MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II MOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI24NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI24NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI24NM60N
MOSFET N CH 600V 17A I2PAK

MOSFET N CH 600V 17A I2PAK

Supplier's Site
Mosfet, N Channel, 600V, 17A, To-262; Channel Type Stmicroelectronics - 87T3779 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 17A, To-262; Channel Type Stmicroelectronics
87T3779
Mosfet, N Channel, 600V, 17A, To-262; Channel Type Stmicroelectronics 87T3779
MOSFET, N CHANNEL, 600V, 17A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 17A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12260-ND 1261093-STI24NM60N STI24NM60N STI24NM60N 87T3779
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI24NM60N MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 600V, 17A, To-262; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA TO-3
QG 46 nC
PD 125000 milliwatts
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