600V 17A N-Ch MOSFET, 190mR Rds On, I2PAK Product overview: STI24NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI24NM60N can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261093-STI24NM60N
Series: MDmesh II
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Family Name: STI24NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 50V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): TK16C60W; IPI60R190C6XK; SPI20N60C3X;
Introduction Date: January 05, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
N-Channel 600V 17A (Tc) 125W (Tc) Through Hole I2PAK
MOSFET N CH 600V 17A I2PAK
MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II MOS
MOSFET, N CHANNEL, 600V, 17A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STI24NM60N | 1261093-STI24NM60N | 497-12260-ND | STI24NM60N | STI24NM60N | 87T3779 |
| Product Name | 600V 17A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STI24NM60N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 600V, 17A, To-262; Channel Type Stmicroelectronics |
| PD | 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| QG | 46 nC | |||||
| Package Type | SOT3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 |
