MOSFET N-CH 600V I2PAK
MOSFET, N-CH, 600V, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:-; RoHS Compliant: Yes
MOSFET N-CH 600V I2PAK
| ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STI24N60M6 | 84AC2881 | STI24N60M6 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, To-262; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 600 volts | ||
| IDSS | 17000 milliamps | ||
| PD | 130000 milliwatts |
