STMicroelectronics, Inc. FETs - Single - STI24N60M2 STI24N60M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261092-STI24N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK (TO-262) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 100V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261092-STI24N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK (TO-262) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 100V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STI24N60M2 - 1261092-STI24N60M2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STI24N60M2
1261092-STI24N60M2
FETs - Single - STI24N60M2 1261092-STI24N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261092-STI24N60M2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK (TO-262) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 150W Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 18A Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261092-STI24N60M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 18A
Rds On (Maximum) at Id, Vgs: 190mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 100V

Buy Now
Single FETs, MOSFETs - 497-13775-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13775-5-ND
Single FETs, MOSFETs 497-13775-5-ND
N-Channel 600V 18A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 18A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Single FETs, MOSFETs - STI24N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STI24N60M2
Single FETs, MOSFETs STI24N60M2
MOSFET N-CH 600V 18A I2PAK

MOSFET N-CH 600V 18A I2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2

MOSFET N-Ch 600 V 0.168 Ohm 18 A MDmesh M2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI24N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI24N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI24N60M2
MOSFET N-CH 600V 18A I2PAK

MOSFET N-CH 600V 18A I2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1261092-STI24N60M2 497-13775-5-ND STI24N60M2 STI24N60M2 STI24N60M2
Product Name FETs - Single - STI24N60M2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
QG 29 nC
PD 150000 milliwatts 150000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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