STMicroelectronics, Inc. Single FETs, MOSFETs STI20N65M5

Description
MOSFET N-CH 650V 18A I2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 650V 18A I2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STI20N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STI20N65M5
Single FETs, MOSFETs STI20N65M5
MOSFET N-CH 650V 18A I2PAK

MOSFET N-CH 650V 18A I2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1096895-STI20N65M5 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1096895-STI20N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1096895-STI20N65M5
Win Source Part Number: 1096895-STI20N65M5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ V Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 130W (Tc) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SPI20N60CFDXKSA1; STFI20N65M5; STI21N65M5; IPI60R190C6XKSA1; STFI31N65M5; SPI20N65C3XKSA1; IPI65R150CFDXKSA1; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -497-13774-5,497-137 74-5 Base Product Number: STI20 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1096895-STI20N65M5
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ V
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 130W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SPI20N60CFDXKSA1; STFI20N65M5; STI21N65M5; IPI60R190C6XKSA1; STFI31N65M5; SPI20N65C3XKSA1; IPI65R150CFDXKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-13774-5,497-13774-5
Base Product Number: STI20
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 497-STI20N65M5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STI20N65M5-ND
Single FETs, MOSFETs 497-STI20N65M5-ND
N-Channel 650V 18A (Tc) 130W (Tc) Through Hole I2PAK (TO-262)

N-Channel 650V 18A (Tc) 130W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
Singapore
N-Channel 650 V 0.160 Ohm 18 A MOSFET Transistor
278-STI20N65M5
N-Channel 650 V 0.160 Ohm 18 A MOSFET Transistor 278-STI20N65M5
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAK package Product overview: STI20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.160 Ohm, 18 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.160 Ohm, 18 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI20N65M5 can be used for catalog matching and distributor lookup.

N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in I2PAK package Product overview: STI20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.160 Ohm, 18 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.160 Ohm, 18 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STI20N65M5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics - 14AC7548 - Newark, An Avnet Company
Chicago, IL, United States
Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics
14AC7548
Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics 14AC7548
POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5

MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI20N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI20N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI20N65M5
MOSFET N-CH 650V 18A I2PAK

MOSFET N-CH 650V 18A I2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STI20N65M5 1096895-STI20N65M5 497-STI20N65M5-ND 278-STI20N65M5 14AC7548 STI20N65M5 STI20N65M5
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 650 V 0.160 Ohm 18 A MOSFET Transistor Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 18000 milliamps 18000 milliamps
PD 130000 milliwatts 130000 milliwatts 130000 milliwatts
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