STMicroelectronics, Inc. Single FETs, MOSFETs STI18NM60N

Description
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet
Description
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STI18NM60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STI18NM60N-ND
Single FETs, MOSFETs STI18NM60N-ND
N-Channel 600V 13A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)

N-Channel 600V 13A (Tc) 110W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
FETs - Single - STI18NM60N - 1261091-STI18NM60N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STI18NM60N
1261091-STI18NM60N
FETs - Single - STI18NM60N 1261091-STI18NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1261091-STI18NM60N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I2PAK (TO-262) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA Power Dissipation (Maximum): 110W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 13A Rds On (Maximum) at Id, Vgs: 285mOhm at 6.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1000pF at 50V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261091-STI18NM60N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 110W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 13A
Rds On (Maximum) at Id, Vgs: 285mOhm at 6.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1000pF at 50V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STI18NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STI18NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STI18NM60N
MOSFET N-CH 600V 13A I2PAK

MOSFET N-CH 600V 13A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET RF Transistors
Product Number STI18NM60N-ND 1261091-STI18NM60N STI18NM60N
Product Name Single FETs, MOSFETs FETs - Single - STI18NM60N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA TO-220; TO-247; SOT3 +/- 25V
V(BR)DSS 600 volts
QG 35 nC
Unlock Full Specs
to access all available technical data