N-Ch MOSFET 100V 180A 2.3mR H2PAK-6 SMT Product overview: STH315N10F7-6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH315N10F7-6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 846539-STH315N10F7-6
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Features: 100 V
Package: Reel - TR
Family Name: STH315
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-14719-2, 497-14719-1, 497-14719-6
MOSFET N-CH 100V 180A H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
MOSFET N-CH 100V 180A H2PAK-6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STH315N10F7-6 | 846539-STH315N10F7-6 | STH315N10F7-6 | 497-14719-1-ND | STH315N10F7-6 | STH315N10F7-6 |
| Product Name | 100V 180A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH315N10F7-6 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 315000 milliwatts | 315000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
