Manufacturer: STMicroelectronics
Win Source Part Number: 1261073-STH310N10F7-
Series: DeepGATE, STripFET VII
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab) Variant
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: STH310N10F7-6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 12800pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 315W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.5 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): CSD19535KTTT; APTM10SKM02G; APTM10DAM02G;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 100V 180A MDmesh II H2PAK
MOSFET N-Ch 100V 180A MDmesh II H2PAK
MOSFET N-Ch 100V 180A MDmesh II H2PAK
MOSFET N-CH 100V 180A H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
MOSFET, N-CH, 100V, 180A, H2PAK-6-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 180A H2PAK-6
MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1261073-STH310N10F7-6 | 7863704P | 1032006 | STH310N10F7-6 | 497-13586-2-ND | 98Y2480 | STH310N10F7-6 | STH310N10F7-6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH310N10F7-6 | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 180A, H2Pak-6-7; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| QG | 180 nC | |||||||
| PD | 315000 milliwatts | 315000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3 | H2PAK | H2pak | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-3 | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | |
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
