MOSFET N-CH 100V 180A H2PAK-6
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package Product overview: STH240N10F7-6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 0.002 Ohm, 180 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 0.002 Ohm, 180 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH240N10F7-6 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261071-STH240N10F7-
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-7, D2Pak (6 Leads + Tab)
Power Dissipation (Maximum): 300W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 180A
Rds On (Maximum) at Id, Vgs: 2.5mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 160nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 11550pF at 25V
MOSFET N-CH 100V 180A H2PAK-6
MOSFET N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
MOSFET, N-CH, 100V, 180A, H2PAK ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STH240N10F7-6 | 497-15312-6-ND | 278-STH240N10F7-6 | 1261071-STH240N10F7-6 | STH240N10F7-6 | STH240N10F7-6 | 47AK6966 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 100 V 0.002 Ohm 180 A MOSFET Transistor | Electronic Wholesale - STH240N10F7-6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 100V, 180A, H2Pak Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 180000 milliamps |
