STMicroelectronics FETs - Single - STH175N4F6-6AG STH175N4F6-6AG

Description
Manufacturer: STMicroelectronics Win Source Part Number: 806908-STH175N4F6-6A G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40V Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 20V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STH175 Maximum Vgs: ±20V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 806908-STH175N4F6-6A G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40V Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 20V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STH175 Maximum Vgs: ±20V
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Suppliers

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FETs - Single - STH175N4F6-6AG - 806908-STH175N4F6-6AG - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STH175N4F6-6AG
806908-STH175N4F6-6AG
FETs - Single - STH175N4F6-6AG 806908-STH175N4F6-6AG
Manufacturer: STMicroelectronics Win Source Part Number: 806908-STH175N4F6-6A G Packaging: Reel Mounting Style: SMD Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40V Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 150W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 20V Current - Continuous Drain (Id) at 25°C: 120A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STH175 Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 806908-STH175N4F6-6AG
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 20V
Current - Continuous Drain (Id) at 25°C: 120A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STH175
Maximum Vgs: ±20V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH175N4F6-6AG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH175N4F6-6AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH175N4F6-6AG
MOSFET N-CH 40V 120A H2PAK-2

MOSFET N-CH 40V 120A H2PAK-2

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

MOSFET Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 806908-STH175N4F6-6AG STH175N4F6-6AG STH175N4F6-6AG
Product Name FETs - Single - STH175N4F6-6AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
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