STMicroelectronics, Inc. Automotive N-Channel 40 V 1.9 mOhm MOSFET Transistor STH175N4F6-2AG

Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package Product overview: STH175N4F6-2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 40 V, 1.9 mOhm, 120 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 40 V, 1.9 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH175N4F6-2AG can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1261068-STH175N4F6-2AG
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 150W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.4mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 130nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 7735pF at 20V