STMicroelectronics, Inc. N-Channel 80 V 0.0028 Ohm 120 A MOSFET Transistor STH170N8F7-2

N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package Product overview: STH170N8F7-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 0.0028 Ohm, 120 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 0.0028 Ohm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH170N8F7-2 can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1103086-STH170N8F7-2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: H2Pak-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 8710pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

N-Channel 80V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2

N-Channel 80V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2

N-Channel 80V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2