Manufacturer: STMicroelectronics
Win Source Part Number: 212288-STH15NB50FI
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: ISOWATT-218
Dimension: ISOWATT-218-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 10.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 3400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, MOS, 500V, 0.36OHM, 9.3 A, N-CHANNEL, ISOWATT-218-3, 14.9X16.2X5.65MM. FREE 2 YEAR RADWELL WARRANTY
N-Channel 500V 10.5A (Tc) 80W (Tc) Through Hole ISOWATT-218
MOSFET N-CH 500V 10.5A ISOWAT218
| Win Source Electronics | Radwell International | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors |
| Product Number | 212288-STH15NB50FI | 66768005 | 497-2783-5-ND | STH15NB50FI |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH15NB50FI | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 500 volts | |||
| PD | 80000 milliwatts |
