STMicroelectronics, Inc. N-Channel 100 V 7.8 mOhm 120 A MOSFET Transistor STH130N10F3-2

N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package Product overview: STH130N10F3-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 7.8 mOhm, 120 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 7.8 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH130N10F3-2 can be used for catalog matching and distributor lookup.

N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2

Manufacturer: STMicroelectronics
Win Source Part Number: 1261065-STH130N10F3-2
Series: STripFET III
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: STH130N10F3-2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: H2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3305pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.3 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): SQM85N10-10-GE3; IPB70N10S312XT; IPB70N10S312ATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited