STMicroelectronics, Inc. Single FETs, MOSFETs STH130N10F3-2

Description
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet
Description
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-13091-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13091-2-ND
Single FETs, MOSFETs 497-13091-2-ND
N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2

N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount H2Pak-2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH130N10F3-2 - 1261065-STH130N10F3-2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH130N10F3-2
1261065-STH130N10F3-2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH130N10F3-2 1261065-STH130N10F3-2
Manufacturer: STMicroelectronics Win Source Part Number: 1261065-STH130N10F3- 2 Series: STripFET III Packaging: Reel - TR Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab) Variant Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: STH130N10F3-2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: H2PAK Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3305pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 250W (Tc) Rds On (Maximum) @ Id, Vgs: 9.3 mOhm @ 60A, 10V Alternative Parts (Cross-Reference): SQM85N10-10-GE3; IPB70N10S312XT; IPB70N10S312ATMA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261065-STH130N10F3-2
Series: STripFET III
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: STH130N10F3-2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: H2PAK
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3305pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 250W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.3 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): SQM85N10-10-GE3; IPB70N10S312XT; IPB70N10S312ATMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
N-Channel 100 V 7.8 mOhm 120 A MOSFET Transistor
278-STH130N10F3-2
N-Channel 100 V 7.8 mOhm 120 A MOSFET Transistor 278-STH130N10F3-2
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package Product overview: STH130N10F3-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 7.8 mOhm, 120 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 7.8 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH130N10F3-2 can be used for catalog matching and distributor lookup.

N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package Product overview: STH130N10F3-2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 7.8 mOhm, 120 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 7.8 mOhm, 120 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH130N10F3-2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET

MOSFET N-Ch 100V 7.8 mOhm 120 A STripFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STH130N10F3-2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STH130N10F3-2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STH130N10F3-2
MOSFET N-CH 100V 120A H2PAK-2

MOSFET N-CH 100V 120A H2PAK-2

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-13091-2-ND 1261065-STH130N10F3-2 278-STH130N10F3-2 STH130N10F3-2 STH130N10F3-2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STH130N10F3-2 N-Channel 100 V 7.8 mOhm 120 A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-220; TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
QG 57 nC
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