STMicroelectronics, Inc. N-Channel 100 V 4.9 mOhm 110 A MOSFET Transistor STH110N10F7-6

N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package Product overview: STH110N10F7-6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100 V, 4.9 mOhm, 110 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100 V, 4.9 mOhm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STH110N10F7-6 can be used for catalog matching and distributor lookup.

N-Channel 100V 110A (Tc) 150W (Tc) Surface Mount H2PAK-6

Manufacturer: STMicroelectronics
Win Source Part Number: 814143-STH110N10F7-6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Part Status: Obsolete (End Of Life)
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-7, D2Pak (6 Leads + Tab)
Power Dissipation (Maximum): 150W (Tc)
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.5mOhm at 55A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 5117pF at 50V
Current - Continuous Drain (Id) at 25°C: 110A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STH110
Maximum Vgs: ±20V