TRENCH GATE FIELD-STOP 1200 V, 7 Product overview: STGYA75H120DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGYA75H120DF2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 1200V 150A 750W Through Hole TO-247
Win Source Part Number: 1338523-STGYA75H120D
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 30
Power - Max: 750 W
Reverse Recovery Time (trr): 356 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Switching Energy: 4.3mJ (on) , 3.9mJ (off)
Input Type: Standard
Gate Charge: 313 nC
Test Condition: 600V, 75A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGYA75
Current - Collector (Ic) (Max): 150 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
Td (on/off) @ 25°C: 61ns/366ns
TRENCH GATE FIELD-STOP 1200 V, 7
TRENCH GATE FIELD-STOP 1200 V, 7
IGBT, 1.2KV, 150A, TO-247-3 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGYA75H120DF2 | 497-STGYA75H120DF2-ND | 1338523-STGYA75H120DF2 | STGYA75H120DF2 | 2348894P | STGYA75H120DF2 | 25AK1326 |
| Product Name | 1200 V IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Single IGBTs | IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 1.2Kv, 150A, To-247-3 Rohs Compliant Stmicroelectronics |
| PD | 750 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | Max247 | TO-3; TO-247 |
