STMicroelectronics, Inc. 1200 V IGBT Transistor STGYA50H120DF2

TRENCH GATE FIELD-STOP, 1200 V, Product overview: STGYA50H120DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGYA50H120DF2 can be used for catalog matching and distributor lookup.

IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247

TRENCH GATE FIELD-STOP, 1200 V,

Win Source Part Number: 1376598-STGYA50H120DF2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: STGYA50
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 600V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 340 ns
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 535 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Switching Energy: 2mJ (on), 2.1mJ (off)
Gate Charge: 210 nC
Td (on/off) @ 25°C: 40ns/284ns