STMicroelectronics, Inc. Single IGBTs STGYA50H120DF2

Description
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Request a Quote Datasheet
Description
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - 497-STGYA50H120DF2-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247

IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1376598-STGYA50H120DF2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1376598-STGYA50H120DF2
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1376598-STGYA50H120DF2
Win Source Part Number: 1376598-STGYA50H120D F2 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Mfr: STMicroelectronics Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247 Base Product Number: STGYA50 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 600V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 340 ns Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 535 W Input Type: Standard IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Switching Energy: 2mJ (on), 2.1mJ (off) Gate Charge: 210 nC Td (on/off) @ 25°C: 40ns/284ns

Win Source Part Number: 1376598-STGYA50H120DF2
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: STGYA50
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 600V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 340 ns
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 535 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Switching Energy: 2mJ (on), 2.1mJ (off)
Gate Charge: 210 nC
Td (on/off) @ 25°C: 40ns/284ns

Buy Now Datasheet
Single IGBTs - STGYA50H120DF2 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGYA50H120DF2
Single IGBTs STGYA50H120DF2
TRENCH GATE FIELD-STOP, 1200 V,

TRENCH GATE FIELD-STOP, 1200 V,

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGYA50H120DF2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGYA50H120DF2
Discrete Semiconductor Products - Transistors - IGBTs STGYA50H120DF2
TRENCH GATE FIELD-STOP, 1200 V

TRENCH GATE FIELD-STOP, 1200 V

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-STGYA50H120DF2-ND 1376598-STGYA50H120DF2 STGYA50H120DF2 STGYA50H120DF2
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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