TRENCH GATE FIELD-STOP, 1200 V,
IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247
Win Source Part Number: 1376598-STGYA50H120D
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: STGYA50
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 600V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): 340 ns
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 535 W
Input Type: Standard
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Switching Energy: 2mJ (on), 2.1mJ (off)
Gate Charge: 210 nC
Td (on/off) @ 25°C: 40ns/284ns
TRENCH GATE FIELD-STOP, 1200 V
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGYA50H120DF2 | 497-STGYA50H120DF2-ND | 1376598-STGYA50H120DF2 | STGYA50H120DF2 |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
