STMicroelectronics, Inc. Single IGBTs STGYA120M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

Win Source Part Number: 1218188-STGYA120M65DF2
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tube
Standard Package: 600
Power - Max: 625 W
Reverse Recovery Time (trr): 202 ns
IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 160 A
Current - Collector Pulsed (Icm): 360 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
Switching Energy: 1.8mJ (on), 4.41mJ (off)
Input Type: Standard
Gate Charge: 420 nC
Td (on/off) @ 25°C: 66ns/185ns
Test Condition: 400V, 120A, 4.7Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3 Exposed Pad
Supplier Device Package: MAX247™
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16976
Base Product Number: STGYA120

IGBT NPT, Trench Field Stop 650V 160A 625W Through Hole MAX247™

Trench gate field-stop IGBT, M series 650 V, 120 A low loss Product overview: STGYA120M65DF2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 120 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 120 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGYA120M65DF2 can be used for catalog matching and distributor lookup.