IGBT Trench Field Stop 600V 120A 469W Through Hole TO-3P
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Product overview: STGWT80V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 80 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 80 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT80V60DF can be used for catalog matching and distributor lookup.
Win Source Part Number: 1026432-STGWT80V60DF
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 469 W
Reverse Recovery Time (trr): 60 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448 nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): STGW80V60DF; FGH60N60SMD_F085; STGFW80V60F; STGW80V60F; FGH60N60SMD; NGTB60N60SWG;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: STGWT80V60DF-ND,497-
Base Product Number: STGWT80
Product Status: Obsolete
IGBT, SINGLE, 600V, 120A, TO-3P-3; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3P; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors Trench gte FieldStop IGBT 600V 80A
IGBT 600V 120A 469W TO-3P
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14563-5-ND | 279-STGWT80V60DF | 1026432-STGWT80V60DF | 98Y2475 | STGWT80V60DF | STGWT80V60DF |
| Product Name | Single IGBTs | 600 V 80 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Igbt, Single, 600V, 120A, To-3P-3; Dc Collector Current Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3 | |||
| Packing Method | Tube | Tube; Tube |
