STMicroelectronics, Inc. IGBT Transistors STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

IGBT 650V 120A 469W TO3P-3L

IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P

IGBT Trench HB Series 650V 80A TO-3P - Discrete Semiconductors - IGBT Transistors

IGBT Trench HB Series 650V 80A TO-3P - Discrete Semiconductors - IGBT Transistors
Delivery on production packaging - Tube. This product is non-returnable.

Win Source Part Number: 1277377-STGWT80H65FB
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Package: Tube
Standard Package: 30
Power - Max: 469 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Input Type: Standard
Gate Charge: 414 nC
Td (on/off) @ 25°C: 84ns/280ns
Test Condition: 400V, 80A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15141-5,-497-15141-5
Base Product Number: STGWT80
Product Status: Obsolete