IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P
Manufacturer: STMicroelectronics
Win Source Part Number: 898014-STGWT80H65DFB
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P
Package: Tube
Package: TO-3P-3, SC-65-3
Mounting: Through Hole
Family Name: STGWT80
Categories: Discrete Semiconductor Products
Case / Package: TO-3P
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-14234-5, -497-14234-5
IGBT Transistors Trench gate H series 650V 80A HiSpd
IGBT, SINGLE, 650V, 120A, TO-3P; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT 650V 120A 469W TO3P-3L
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14234-5-ND | 898014-STGWT80H65DFB | STGWT80H65DFB | 45AC7598 | STGWT80H65DFB |
| Product Name | Single IGBTs | IGBTs - Single - STGWT80H65DFB | IGBT Transistors | Igbt, Single, 650V, 120A, To-3P; Continuous Collector Current Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | TO-3 | ||
| Packing Method | Tube | Tube; Tube |
