IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P
Trench gate field-stop 650 V, 80 A high speed HB series IGBT Product overview: STGWT80H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 80 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 80 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT80H65DFB can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 898014-STGWT80H65DFB
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-3P
Package: Tube
Package: TO-3P-3, SC-65-3
Mounting: Through Hole
Family Name: STGWT80
Categories: Discrete Semiconductor Products
Case / Package: TO-3P
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-14234-5, -497-14234-5
IGBT, SINGLE, 650V, 120A, TO-3P; Continuous Collector Current:120A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:469W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
IGBT 650V 120A 469W TO3P-3L
IGBT Transistors Trench gate H series 650V 80A HiSpd
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14234-5-ND | 279-STGWT80H65DFB | 898014-STGWT80H65DFB | 45AC7598 | STGWT80H65DFB | STGWT80H65DFB |
| Product Name | Single IGBTs | 650 V 80 A IGBT Transistor | IGBTs - Single - STGWT80H65DFB | Igbt, Single, 650V, 120A, To-3P; Continuous Collector Current Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ? to 175 C (? to 347 F) | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | TO-3 | |||
| Packing Method | Tube | Tube; Tube |
