STMicroelectronics, Inc. 600 V 60 A IGBT Transistor STGWT60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Product overview: STGWT60V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT60V60DF can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 795624-STGWT60V60DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 375W
Reverse Recovery Time (trr): 74ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 750μJ (on), 550μJ (off)
Input Type: Standard
Gate Charge: 334nC
Td (on/off) @ 25°C: 60ns/208ns
Test Condition: 400V, 60A, 4.7 Ohm, 15V
Family Name: STGWT60V60DF
Categories: Discrete Semiconductor Products
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 60A
Alternative Parts (Cross-Reference): IXGR50N60BD1; IXSR40N60CD1; IXSX50N60AU1; IXGR50N60A2U1;
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

IGBT Trench Field Stop 600V 80A 375W Through Hole