Manufacturer: STMicroelectronics
Win Source Part Number: 804501-STGWT60H65DFB
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 375W
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 1.09mJ (on), 626μJ (off)
Input Type: Standard
Gate Charge: 306nC
Test Condition: 400V, 60A, 5Ohm, 15V
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 60A
Td (on/off) at 25°C: 51ns/160ns
Part Number Series: STGWT60
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-3P
IGBT 650V 80A 375W TO3P-3L
IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
IGBT, 650V, 80A, 175DEG C, 375W ROHS COMPLIANT: YES
IGBT 650V 80A 375W TO3P-3L
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 804501-STGWT60H65DFB | 497-14232-5-ND | STGWT60H65DFB | STGWT60H65DFB | 69AH2739 | STGWT60H65DFB |
| Product Name | IGBTs - Single - STGWT60H65DFB | Single IGBTs | Single IGBTs | IGBT Transistors | Igbt, 650V, 80A, 175Deg C, 375W Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 650 volts |
