Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Product overview: STGWT60H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT60H65DFB can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 804501-STGWT60H65DFB
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 375W
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 240A
Switching Energy: 1.09mJ (on), 626μJ (off)
Input Type: Standard
Gate Charge: 306nC
Test Condition: 400V, 60A, 5Ohm, 15V
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 60A
Td (on/off) at 25°C: 51ns/160ns
Part Number Series: STGWT60
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-3P
IGBT 650V 80A 375W TO3P-3L
IGBT, 650V, 80A, 175DEG C, 375W ROHS COMPLIANT: YES
IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
IGBT 650V 80A 375W TO3P-3L
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWT60H65DFB | 804501-STGWT60H65DFB | 497-14232-5-ND | STGWT60H65DFB | 69AH2739 | STGWT60H65DFB | STGWT60H65DFB |
| Product Name | 650 V 60 A IGBT Transistor | IGBTs - Single - STGWT60H65DFB | Single IGBTs | Single IGBTs | Igbt, 650V, 80A, 175Deg C, 375W Rohs Compliant Stmicroelectronics | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 375000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| VCES | 650 volts |
