Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Product overview: STGWT40V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT40V60DF can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261060-STGWT40V60DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 283W
Reverse Recovery Time (trr): 41ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 456μJ (on), 411μJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 52ns/208ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Family Name: STGWT40V60DF
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 40A
Alternative Parts (Cross-Reference): FGH40N6S2D; FGH40N6S2D_NL; HGTG40N60C3;
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
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IGBT Transistors 600V 40A High Speed Trench Gate IGBT
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWT40V60DF | 1261060-STGWT40V60DF | 497-13771-5-ND | STGWT40V60DF | STGWT40V60DF |
| Product Name | 600 V 40 A IGBT Transistor | IGBTs - Single - STGWT40V60DF | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| PD | 283000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| VCES | 600 volts |