TRENCH GATE FIELD-STOP IGBT, HB
Trench gate field-stop 650 V, 40 A high-speed HB series IGBT Product overview: STGWT40HP65FB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT40HP65FB can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P
Manufacturer: STMicroelectronics
Win Source Part Number: 1261059-STGWT40HP65F
Packaging: Tube
Mounting Style: Through Hole
Reverse Recovery Time (trr): 140ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 363μJ (off)
Input Type: Standard
Gate Charge: 210nC
Test Condition: 400V, 40A, 5Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 600
MSL Level: 1 (Unlimited)
Maximum Power: 283W
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 40A
Td (on/off) at 25°C: -/142ns
IGBT Transistors PTD HIGH VOLTAGE
TRENCH GATE FIELD-STOP IGBT, HB
IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGWT40HP65FB | 279-STGWT40HP65FB | 497-16972-ND | 1261059-STGWT40HP65FB | STGWT40HP65FB | STGWT40HP65FB | 26AH0173 |
| Product Name | Single IGBTs | 650 V 40 A IGBT Transistor | Single IGBTs | IGBTs - Single - STGWT40HP65FB | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 80A, 175Deg C, 283W; Dc Collector Current Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | 160 A | TO-3 | ||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
