IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P
Manufacturer: STMicroelectronics
Win Source Part Number: 1103080-STGWT40H65FB
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 210nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 283W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 498mJ (on), 363mJ (off)
Turn-on and Turn-off delay time: 40ns/142ns
Testing Conditions: 400V, 40A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): FGA40N65SMD; STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
IGBT 650V 80A 283W TO3P-3L
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14230-5-ND | 1103080-STGWT40H65FB | STGWT40H65FB |
| Product Name | Single IGBTs | IGBTs - Single - STGWT40H65FB | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
