STMicroelectronics, Inc. IGBTs - Single - STGWT40H65FB STGWT40H65FB

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103080-STGWT40H65FB Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 210nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 283W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A Total Switching Energy(Ets): 498mJ (on), 363mJ (off) Turn-on and Turn-off delay time: 40ns/142ns Testing Conditions: 400V, 40A, 5 Ohm, 15V Alternative Parts (Cross-Reference): FGA40N65SMD; STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103080-STGWT40H65FB Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 210nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 283W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A Total Switching Energy(Ets): 498mJ (on), 363mJ (off) Turn-on and Turn-off delay time: 40ns/142ns Testing Conditions: 400V, 40A, 5 Ohm, 15V Alternative Parts (Cross-Reference): FGA40N65SMD; STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGWT40H65FB - 1103080-STGWT40H65FB - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGWT40H65FB
1103080-STGWT40H65FB
IGBTs - Single - STGWT40H65FB 1103080-STGWT40H65FB
Manufacturer: STMicroelectronics Win Source Part Number: 1103080-STGWT40H65FB Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 210nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 283W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A Total Switching Energy(Ets): 498mJ (on), 363mJ (off) Turn-on and Turn-off delay time: 40ns/142ns Testing Conditions: 400V, 40A, 5 Ohm, 15V Alternative Parts (Cross-Reference): FGA40N65SMD; STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103080-STGWT40H65FB
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 210nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 283W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 40A
Total Switching Energy(Ets): 498mJ (on), 363mJ (off)
Turn-on and Turn-off delay time: 40ns/142ns
Testing Conditions: 400V, 40A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): FGA40N65SMD; STGWT60H65FB; STGWT40H65FB; IKW30N65EL5XKSA1;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - 497-14230-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-14230-5-ND
Single IGBTs 497-14230-5-ND
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P

IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWT40H65FB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWT40H65FB
Discrete Semiconductor Products - Transistors - IGBTs STGWT40H65FB
IGBT 650V 80A 283W TO3P-3L

IGBT 650V 80A 283W TO3P-3L

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103080-STGWT40H65FB 497-14230-5-ND STGWT40H65FB
Product Name IGBTs - Single - STGWT40H65FB Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.3 volts
PD 283000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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