Trench gate field-stop 650 V, 40 A high speed HB series IGBT Product overview: STGWT40H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 40 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 40 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT40H65DFB can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 80A 283W Through Hole TO-3P
Manufacturer: STMicroelectronics
Win Source Part Number: 813176-STGWT40H65DFB
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 283W
Reverse Recovery Time (trr): 62ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 160A
Switching Energy: 498μJ (on), 363μJ (off)
Input Type: Standard
Gate Charge: 210nC
Test Condition: 400V, 40A, 5Ohm, 15V
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-3P-3, SC-65-3
Current - Collector (Ic) (Maximum): 80A
Voltage - Collector Emitter Breakdown (Maximum): 650V
Popularity: Low
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vce(on) (Maximum) at Vge, Ic: 2V at 15V, 40A
Td (on/off) at 25°C: 40ns/142ns
Part Number Series: STGWT40
IGBT 650V 80A 283W TO3P-3L
IGBT, 650V, 80A, 175DEG C, 283W ROHS COMPLIANT: YES
IGBT, 650V, 80A, 175DEG C, 283W ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWT40H65DFB | 497-14229-5-ND | 813176-STGWT40H65DFB | STGWT40H65DFB | 69AH2738 | 88176738 |
| Product Name | 650 V 40 A IGBT Transistor | Single IGBTs | IGBTs - Single - STGWT40H65DFB | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 80A, 175Deg C, 283W Rohs Compliant Stmicroelectronics | IGBT |
| PD | 283000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3 |
