STMicroelectronics, Inc. Single IGBTs STGWT30V60DF

Description
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-3P
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Description
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-3P
Request a Quote Datasheet

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Product
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Single IGBTs - 497-13770-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13770-5-ND
Single IGBTs 497-13770-5-ND
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-3P

IGBT Trench Field Stop 600V 60A 258W Through Hole TO-3P

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IGBTs - Single - STGWT30V60DF - 795623-STGWT30V60DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGWT30V60DF
795623-STGWT30V60DF
IGBTs - Single - STGWT30V60DF 795623-STGWT30V60DF
Manufacturer: STMicroelectronics Win Source Part Number: 795623-STGWT30V60DF Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 258W Reverse Recovery Time (trr): 53ns IGBT Type: Trench Field Stop Current - Collector Pulsed (Icm): 120A Switching Energy: 383μJ (on), 233μJ (off) Input Type: Standard Gate Charge: 163nC Td (on/off) @ 25°C: 45ns/189ns Test Condition: 400V, 30A, 10 Ohm, 15V Family Name: STGWT30V60DF Categories: Discrete Semiconductor Products Manufacturer Package: TO-3P Current - Collector (Ic) (Maximum): 60A Voltage - Collector Emitter Breakdown (Maximum): 600V Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 30A Alternative Parts (Cross-Reference): SGH30N60RUFD; SGH30N60RUFDTU_NL; FGA30N60LSD; GT50J328(Q); ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2021 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 795623-STGWT30V60DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 258W
Reverse Recovery Time (trr): 53ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 383μJ (on), 233μJ (off)
Input Type: Standard
Gate Charge: 163nC
Td (on/off) @ 25°C: 45ns/189ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Family Name: STGWT30V60DF
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 30A
Alternative Parts (Cross-Reference): SGH30N60RUFD; SGH30N60RUFDTU_NL; FGA30N60LSD; GT50J328(Q);
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2021
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
IGBT Transistors
STGWT30V60DF
IGBT Transistors STGWT30V60DF
IGBT Transistors 600V 30A High Speed Trench Gate IGBT

IGBT Transistors 600V 30A High Speed Trench Gate IGBT

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Discrete Semiconductor Products - Transistors - IGBTs - STGWT30V60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWT30V60DF
Discrete Semiconductor Products - Transistors - IGBTs STGWT30V60DF
IGBT 600V 60A 258W TO3P-3

IGBT 600V 60A 258W TO3P-3

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 497-13770-5-ND 795623-STGWT30V60DF STGWT30V60DF STGWT30V60DF
Product Name Single IGBTs IGBTs - Single - STGWT30V60DF IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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