Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Product overview: STGWT30V60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT30V60DF can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 600V 60A 258W Through Hole TO-3P
Manufacturer: STMicroelectronics
Win Source Part Number: 795623-STGWT30V60DF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 258W
Reverse Recovery Time (trr): 53ns
IGBT Type: Trench Field Stop
Current - Collector Pulsed (Icm): 120A
Switching Energy: 383μJ (on), 233μJ (off)
Input Type: Standard
Gate Charge: 163nC
Td (on/off) @ 25°C: 45ns/189ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Family Name: STGWT30V60DF
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3P
Current - Collector (Ic) (Maximum): 60A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 30A
Alternative Parts (Cross-Reference): SGH30N60RUFD; SGH30N60RUFDTU_NL; FGA30N60LSD; GT50J328(Q);
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2021
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
IGBT Transistors 600V 30A High Speed Trench Gate IGBT
IGBT 600V 60A 258W TO3P-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWT30V60DF | 497-13770-5-ND | 795623-STGWT30V60DF | STGWT30V60DF | STGWT30V60DF |
| Product Name | 600 V 30 A IGBT Transistor | Single IGBTs | IGBTs - Single - STGWT30V60DF | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 258000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 |