Win Source Part Number: 1108222-STGWT30HP65F
Category: Discrete Semiconductor Products>Transistors
Series: HB
Package: Tube
Standard Package: 600
Power - Max: 260 W
Reverse Recovery Time (trr): 140 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 293µJ (off)
Input Type: Standard
Gate Charge: 149 nC
Td (on/off) @ 25°C: -/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGWT30
IGBT TRENCH 650V 60A TO3P
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
IGBT Trench Field Stop 650V 60A 260W Through Hole TO-3P
IGBT TRENCH 650V 60A TO3P
| Win Source Electronics | ODG (Origin Data Global) | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1108222-STGWT30HP65FB | STGWT30HP65FB | STGWT30HP65FB | STGWT30HP65FB-ND | STGWT30HP65FB |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Single | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | |
| VCES | 650 volts |
