IGBT Trench Field Stop 650V 30A 260W Through Hole TO-3P
Win Source Part Number: 1219067-STGWT30H65FB
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 260 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 151µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149 nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-14468-5,497-144
Base Product Number: STGWT30
Product Status: Obsolete
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
IGBT 650V 30A 260W TO3PL
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-14468-5-ND | 1219067-STGWT30H65FB | STGWT30H65FB | STGWT30H65FB |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
