Trench gate field-stop 650 V, 30 A high speed HB series IGBT Product overview: STGWT30H65FB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT30H65FB can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 30A 260W Through Hole TO-3P
Win Source Part Number: 1219067-STGWT30H65FB
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 260 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Switching Energy: 151µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149 nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -497-14468-5,497-144
Base Product Number: STGWT30
Product Status: Obsolete
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
IGBT 650V 30A 260W TO3PL
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-STGWT30H65FB | 497-14468-5-ND | 1219067-STGWT30H65FB | STGWT30H65FB | STGWT30H65FB |
| Product Name | 650 V 30 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 260000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 |