IGBT 600V 30A Trench Field-Stop TO-3P
IGBT 600V 30A Trench Field-Stop TO-3P
IGBT 600V 30A Trench Field-Stop TO-3P
Trench gate field-stop 600 V, 30 A high speed HB series IGBT Product overview: STGWT30H60DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 30 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 30 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT30H60DFB can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 898010-STGWT30H60DFB
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: IGBT Trench Field Stop 600 V 60 A 260 W Through Hole TO-3P
Package: TO-3P-3, SC-65-3
Package: Tube
Mounting: Through Hole
Family Name: STGWT30
Categories: Discrete Semiconductor Products
Case / Package: TO-3P
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 27 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
IGBT 600V 60A 260W TO3PL
IGBT Trench Field Stop 600V 60A 260W Through Hole TO-3P
IGBT 600V 60A 260W TO3PL
TRANSISTOR, IGBT, 600V, 60A, TO-3P ROHS COMPLIANT: YES
IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 8607325P | 8607325 | 279-STGWT30H60DFB | 898010-STGWT30H60DFB | STGWT30H60DFB | 497-15140-5-ND | STGWT30H60DFB | 47AK6957 | STGWT30H60DFB |
| Product Name | IGBTs | IGBTs | 600 V 30 A IGBT Transistor | IGBTs - Single - STGWT30H60DFB | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Transistor, Igbt, 600V, 60A, To-3P Rohs Compliant Stmicroelectronics | IGBT Transistors |
| Package Type | TO-3P | To-3p | TO-3; SOT3; TO-3P | TO-3; TO-3P-3, SC-65-3 | TO-3; TO-3P-3, SC-65-3 | 120 A | TO-3 | ||
| Polarity | N-Channel | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
