The IGBT, Single, 650V, 40A, TO-3P from STMicroelectronics is designed for high-speed switching applications. It features a maximum collector-emitter voltage of 650V and a continuous collector current rating of 40A at a case temperature of 25¬8C, which reduces to 20A at 100¬8C. The device has a typical collector-emitter saturation voltage (Vce(on)) of 1.55V at 20A, and a total power dissipation capability of 168W. It operates within a junction temperature range of -55¬8C to 175¬8C and has a low thermal resistance of 0.9¬8C/W from junction to case. This IGBT is suitable for applications such as photovoltaic inverters and high-frequency converters, offering minimized tail current and safe paralleling capabilities. The product is RoHS compliant and comes in a TO-3P package with three pins.
IGBT Trench Field Stop 650V 40A 168W Through Hole TO-3P
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Product overview: STGWT20H65FB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 20 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 20 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT20H65FB can be used for catalog matching and distributor lookup.
Win Source Part Number: 1194425-STGWT20H65FB
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Power - Max: 168 W
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Switching Energy: 77µJ (on), 170µJ (off)
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 30ns/139ns
Test Condition: 400V, 20A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15139-5,-497-151
Base Product Number: STGWT20
IGBT 650V 40A 168W TO3P
IGBT, SINGLE, 650V, 40A, TO-3P; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:168W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 497-15139-5-ND | 279-STGWT20H65FB | 1194425-STGWT20H65FB | STGWT20H65FB | 61AC2100 |
| Product Name | Single IGBTs | 650 V 20 A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 40A, To-3P; Dc Collector Current Stmicroelectronics |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3 | TO-3 | ||
| Packing Method | Tube | Tube; Tube |
