STMicroelectronics, Inc. IGBTs - Single - STGWT20H60DF STGWT20H60DF

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103077-STGWT20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Alternative Parts (Cross-Reference): SGH20N60RUFDTU; 2SH20; STGWT40H60DLFB; STGWT20H60DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103077-STGWT20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Alternative Parts (Cross-Reference): SGH20N60RUFDTU; 2SH20; STGWT40H60DLFB; STGWT20H60DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGWT20H60DF - 1103077-STGWT20H60DF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGWT20H60DF
1103077-STGWT20H60DF
IGBTs - Single - STGWT20H60DF 1103077-STGWT20H60DF
Manufacturer: STMicroelectronics Win Source Part Number: 1103077-STGWT20H60DF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 90ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 167W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2V @ 15V, 20A Total Switching Energy(Ets): 209μJ (on), 261μJ (off) Turn-on and Turn-off delay time: 42.5ns/177ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Alternative Parts (Cross-Reference): SGH20N60RUFDTU; 2SH20; STGWT40H60DLFB; STGWT20H60DF; Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103077-STGWT20H60DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 90ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 115nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2V @ 15V, 20A
Total Switching Energy(Ets): 209μJ (on), 261μJ (off)
Turn-on and Turn-off delay time: 42.5ns/177ns
Testing Conditions: 400V, 20A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): SGH20N60RUFDTU; 2SH20; STGWT40H60DLFB; STGWT20H60DF;
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600 V 20 A IGBT Transistor
279-STGWT20H60DF
600 V 20 A IGBT Transistor 279-STGWT20H60DF
600 V, 20 A high speed trench gate field-stop IGBT Product overview: STGWT20H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 20 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 20 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT20H60DF can be used for catalog matching and distributor lookup.

600 V, 20 A high speed trench gate field-stop IGBT Product overview: STGWT20H60DF from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600 V, 20 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600 V, 20 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWT20H60DF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - STGWT20H60DF - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGWT20H60DF
Single IGBTs STGWT20H60DF
IGBT 600V 40A 167W TO3PF

IGBT 600V 40A 167W TO3PF

Supplier's Site Datasheet
Single IGBTs - 497-13961-5-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-13961-5-ND
Single IGBTs 497-13961-5-ND
IGBT Trench Field Stop 600V 40A 167W Through Hole TO-3P

IGBT Trench Field Stop 600V 40A 167W Through Hole TO-3P

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
STGWT20H60DF
IGBT Transistors STGWT20H60DF
IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWT20H60DF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWT20H60DF
Discrete Semiconductor Products - Transistors - IGBTs STGWT20H60DF
IGBT 600V 40A 167W TO3PF

IGBT 600V 40A 167W TO3PF

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103077-STGWT20H60DF 279-STGWT20H60DF STGWT20H60DF 497-13961-5-ND STGWT20H60DF STGWT20H60DF
Product Name IGBTs - Single - STGWT20H60DF 600 V 20 A IGBT Transistor Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2 volts
PD 167000 milliwatts 167000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data