STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single STGWA8M120DF3

Description
Win Source Part Number: 1277365-STGWA8M120DF 3 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 600 Power - Max: 167 W Reverse Recovery Time (trr): 103 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 16 A Current - Collector Pulsed (Icm): 32 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Switching Energy: 390µJ (on), 370µJ (Off) Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 20ns/126ns Test Condition: 600V, 8A, 33Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STGWA8
  • Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277365-STGWA8M120DF3 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - STGWA8M120DF3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single IGBTs - 497-STGWA8M120DF3-ND - DigiKey
    DigiKey
  • Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current Stmicroelectronics - 14AC7542 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - STGWA8M120DF3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277365-STGWA8M120DF 3 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 600 Power - Max: 167 W Reverse Recovery Time (trr): 103 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 16 A Current - Collector Pulsed (Icm): 32 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Switching Energy: 390µJ (on), 370µJ (Off) Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 20ns/126ns Test Condition: 600V, 8A, 33Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STGWA8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1277365-STGWA8M120DF3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1277365-STGWA8M120DF3
Discrete Semiconductor Products - Transistors - IGBTs - Single 1277365-STGWA8M120DF3
Win Source Part Number: 1277365-STGWA8M120DF 3 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: M Package: Tube Standard Package: 600 Power - Max: 167 W Reverse Recovery Time (trr): 103 ns IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 16 A Current - Collector Pulsed (Icm): 32 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Switching Energy: 390µJ (on), 370µJ (Off) Input Type: Standard Gate Charge: 32 nC Td (on/off) @ 25°C: 20ns/126ns Test Condition: 600V, 8A, 33Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STGWA8

Win Source Part Number: 1277365-STGWA8M120DF3
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: M
Package: Tube
Standard Package: 600
Power - Max: 167 W
Reverse Recovery Time (trr): 103 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 16 A
Current - Collector Pulsed (Icm): 32 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
Switching Energy: 390µJ (on), 370µJ (Off)
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 20ns/126ns
Test Condition: 600V, 8A, 33Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STGWA8

Buy Now Datasheet
Single IGBTs - STGWA8M120DF3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGWA8M120DF3
Single IGBTs STGWA8M120DF3
IGBT

IGBT

Supplier's Site Datasheet
Single IGBTs - 497-STGWA8M120DF3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-STGWA8M120DF3-ND
Single IGBTs 497-STGWA8M120DF3-ND
IGBT Trench Field Stop 1200V 16A 167W Through Hole TO-247 Long Leads

IGBT Trench Field Stop 1200V 16A 167W Through Hole TO-247 Long Leads

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200 V 8 A IGBT Transistor
279-STGWA8M120DF3
1200 V 8 A IGBT Transistor 279-STGWA8M120DF3
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss Product overview: STGWA8M120DF3 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 8 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V, 8 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA8M120DF3 can be used for catalog matching and distributor lookup.

Trench gate field-stop IGBT, M series 1200 V, 8 A low loss Product overview: STGWA8M120DF3 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 8 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200 V, 8 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA8M120DF3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current Stmicroelectronics - 14AC7542 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current Stmicroelectronics
14AC7542
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current Stmicroelectronics 14AC7542
IGBT, SINGLE, 1.2KV, 16A, TO-247-3; DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

IGBT, SINGLE, 1.2KV, 16A, TO-247-3; DC Collector Current:16A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWA8M120DF3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWA8M120DF3
Discrete Semiconductor Products - Transistors - IGBTs STGWA8M120DF3
IGBT

IGBT

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGWA8M120DF3
IGBT Transistors STGWA8M120DF3
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1277365-STGWA8M120DF3 STGWA8M120DF3 497-STGWA8M120DF3-ND 279-STGWA8M120DF3 14AC7542 STGWA8M120DF3 STGWA8M120DF3
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single Single IGBTs Single IGBTs 1200 V 8 A IGBT Transistor Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current Stmicroelectronics Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
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