TRENCH GATE FIELD-STOP, 650 V, 7
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package Product overview: STGWA75H65DFB2 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 75 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 75 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA75H65DFB2 can be used for catalog matching and distributor lookup.
IGBT Trench Field Stop 650V 115A 357W Through Hole TO-247 Long Leads
Manufacturer: STMicroelectronics
Win Source Part Number: 1324412-STGWA75H65DF
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 357 W
Reverse Recovery Time (trr): 88 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 115 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Switching Energy: 1.428mJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 207 nC
Td (on/off) @ 25°C: 28ns/100ns
Test Condition: 400V, 75A, 2.2Ohm, 15V
Supplier Device Package: TO-247 Long Leads
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 84
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-STGWA75H65DFB2
Base Product Number: STGWA75
Moisture Sensitivity Level (MSL): 1 (Unlimited)
IGBT, 650V, 115A, 357W, TO-247LL ROHS COMPLIANT: YES
TRENCH GATE FIELD-STOP, 650 V, 7
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | STGWA75H65DFB2 | 279-STGWA75H65DFB2 | 497-STGWA75H65DFB2-ND | 1324412-STGWA75H65DFB2 | 2067211 | 2067212P | 82AH9146 | STGWA75H65DFB2 |
| Product Name | Single IGBTs | 650 V 75 A IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | IGBTs | IGBTs | Igbt, 650V, 115A, 357W, To-247Ll Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-3; TO-247 | ||
| Packing Method | Tube | Tube; Tube | Tube; Tube |
