STMicroelectronics, Inc. IGBTs - Single - STGWA60H65DFB STGWA60H65DFB

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103076-STGWA60H65DF B Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Family Name: STGWA60H65DFB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Long Leads Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2V @ 15V, 60A Total Switching Energy(Ets): 1.59mJ (on), 900μJ (off) Turn-on and Turn-off delay time: 66ns/210ns Testing Conditions: 400V, 60A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH40N60UFTU-SN00007 ; NGTB40N60FL2WG; NGTB40N60L2WG; HGTG40N60A4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
  • IGBTs - Single - STGWA60H65DFB - 1103076-STGWA60H65DFB - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - STGWA60H65DFB - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single IGBTs - 497-STGWA60H65DFB-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - IGBTs - STGWA60H65DFB - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103076-STGWA60H65DF B Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Family Name: STGWA60H65DFB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Long Leads Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2V @ 15V, 60A Total Switching Energy(Ets): 1.59mJ (on), 900μJ (off) Turn-on and Turn-off delay time: 66ns/210ns Testing Conditions: 400V, 60A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH40N60UFTU-SN00007 ; NGTB40N60FL2WG; NGTB40N60L2WG; HGTG40N60A4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - STGWA60H65DFB - 1103076-STGWA60H65DFB - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - STGWA60H65DFB
1103076-STGWA60H65DFB
IGBTs - Single - STGWA60H65DFB 1103076-STGWA60H65DFB
Manufacturer: STMicroelectronics Win Source Part Number: 1103076-STGWA60H65DF B Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 60ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 306nC Family Name: STGWA60H65DFB Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Long Leads Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 240A Collector-emitter saturation voltage(Max): 2V @ 15V, 60A Total Switching Energy(Ets): 1.59mJ (on), 900μJ (off) Turn-on and Turn-off delay time: 66ns/210ns Testing Conditions: 400V, 60A, 10 Ohm, 15V Alternative Parts (Cross-Reference): FGH40N60UFTU-SN00007 ; NGTB40N60FL2WG; NGTB40N60L2WG; HGTG40N60A4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1103076-STGWA60H65DFB
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 306nC
Family Name: STGWA60H65DFB
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 Long Leads
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2V @ 15V, 60A
Total Switching Energy(Ets): 1.59mJ (on), 900μJ (off)
Turn-on and Turn-off delay time: 66ns/210ns
Testing Conditions: 400V, 60A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): FGH40N60UFTU-SN00007; NGTB40N60FL2WG; NGTB40N60L2WG; HGTG40N60A4;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - STGWA60H65DFB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
STGWA60H65DFB
Single IGBTs STGWA60H65DFB
IGBT BIPO 650V 60A TO247-3

IGBT BIPO 650V 60A TO247-3

Supplier's Site Datasheet
Single IGBTs - 497-STGWA60H65DFB-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
497-STGWA60H65DFB-ND
Single IGBTs 497-STGWA60H65DFB-ND
IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-3

IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
650 V 60 A IGBT Transistor
279-STGWA60H65DFB
650 V 60 A IGBT Transistor 279-STGWA60H65DFB
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Product overview: STGWA60H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA60H65DFB can be used for catalog matching and distributor lookup.

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Product overview: STGWA60H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA60H65DFB can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - STGWA60H65DFB - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
STGWA60H65DFB
Discrete Semiconductor Products - Transistors - IGBTs STGWA60H65DFB
IGBT BIPO 650V 60A TO247-3

IGBT BIPO 650V 60A TO247-3

Supplier's Site
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> IGBTs
STGWA60H65DFB
Triode/MOS Tube/Transistor >> IGBTs STGWA60H65DFB
375W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS

375W 80A 650V FS(Field Stop) TO-247-3 IGBTs ROHS

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
STGWA60H65DFB
IGBT Transistors STGWA60H65DFB
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1103076-STGWA60H65DFB STGWA60H65DFB 497-STGWA60H65DFB-ND 279-STGWA60H65DFB STGWA60H65DFB STGWA60H65DFB STGWA60H65DFB
Product Name IGBTs - Single - STGWA60H65DFB Single IGBTs Single IGBTs 650 V 60 A IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs Triode/MOS Tube/Transistor >> IGBTs IGBT Transistors
VCE(on) 2 volts
PD 375000 milliwatts 375000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247 Long Leads TO-247; TO-247-3 TO-247; TO-247-3 TO-247
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