Manufacturer: STMicroelectronics
Win Source Part Number: 1103076-STGWA60H65DF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 60ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 306nC
Family Name: STGWA60H65DFB
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247 Long Leads
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2V @ 15V, 60A
Total Switching Energy(Ets): 1.59mJ (on), 900μJ (off)
Turn-on and Turn-off delay time: 66ns/210ns
Testing Conditions: 400V, 60A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): FGH40N60UFTU-SN00007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Product overview: STGWA60H65DFB from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 60 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 60 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-STGWA60H65DFB can be used for catalog matching and distributor lookup.
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| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1103076-STGWA60H65DFB | 279-STGWA60H65DFB | STGWA60H65DFB | 497-STGWA60H65DFB-ND | STGWA60H65DFB | STGWA60H65DFB | STGWA60H65DFB |
| Product Name | IGBTs - Single - STGWA60H65DFB | 650 V 60 A IGBT Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs | IGBT Transistors |
| VCE(on) | 2 volts | ||||||
| PD | 375000 milliwatts | 375000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-247; SOT3; TO-247 Long Leads | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247 |
